Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500/spl deg/C than CVD TiN of 450/spl deg/C.