Nonlinear Properties of GaAs/InGaP HBT Under High-Power Microwave Pulse Injection

The nonlinear process of high-power microwave (HPM) pulse injected into the low noise amplifier (LNA) based on a GaAs/InGaP heterojunction bipolar transistor (HBT) is studied through experiment and simulation by means of a microwave pulse injection at 1.6, 1.8, and 2 GHz. The experiment results indicate that the real-time response and voltage characteristics of LNA under HPM pulse show nonlinear features. In detail, the feature of the positive peak voltage is from linear increase to saturation and increase again, and the feature of the negative peak voltage is from linear increase to saturation as the injection power increases. The characteristics of nonlinear effects are basically the same when the frequencies of HPMs are 1.6, 1.8, and 2 GHz. Furthermore, the 2-D simulation model is established to analyze the nonlinear feature. The simulation results match with the experimental results.