Electron mobility enhancement in AlN∕GaN∕AlN heterostructures with InGaN nanogrooves

The authors show that the electron mobility can be strongly enhanced in AlN∕GaN∕AlN heterostructures with the shallow InxGa1−xN channel—nanogroove—in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x≈0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron—interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (1011–1013cm−2), which is important for GaN technology.