材料科学
硅
扫描电子显微镜
外延
兴奋剂
晶体缺陷
叠加断层
氮气
蚀刻(微加工)
结晶学
位错
氧气
单晶
Crystal(编程语言)
分析化学(期刊)
图层(电子)
光电子学
纳米技术
复合材料
化学
有机化学
色谱法
程序设计语言
计算机科学
作者
Huan Tuo,Yun Liu,Minghao Li,Rongwang Dai,Hao Wang,Yuehui Yu,Zhongying Xue,Xing Wei
标识
DOI:10.1016/j.mssp.2023.107583
摘要
In this work, as-grown defects and their secondary defects in 300 mm nitrogen-doped Czochralski-grown single-crystal silicon (NCZ-Si) are investigated. Secondary defects are revealed by homogeneous epitaxial layer growth, and as-grown defects are decorated via gaseous hydrogen chloride (HCl) etching. Localized light scattering (LLS) technique is utilized to inspect defect distribution and provide the latex sphere equivalent (LSE) size to differentiate defect types. With the locations of LLS, the morphology of defect is observed by scanning electron microscopy (SEM). According to the results, it indicated that secondary defects are extrinsic dislocation loops and stacking fault (SF) loops, which are induced by as-grown oxygen precipitates during the growth and cooling process. Furthermore, the correlation between the counts of secondary defects and nitrogen concentration is obtained. It contributes to the optimization of nitrogen doping to avoid the generation of detrimental defects for device operation.
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