神经形态工程学
记忆电阻器
铁电性
材料科学
记忆晶体管
突触重量
光电子学
纳米技术
计算机科学
电子工程
电阻随机存取存储器
电气工程
电压
人工神经网络
工程类
电介质
机器学习
作者
Ilya Margolin,Anastasia Chouprik,Vitalii Mikheev,Sergei Zarubin,Dmitrii Negrov
摘要
The development of the next generation of flexible electronics for biomedical applications requires the implementation of flexible active elements, potentially microcontrollers. The further step in this direction includes the development of devices for data processing directly on-chip, in particular, devices for neuromorphic computing. One of the key elements put forward within this paradigm is the memristor—the device emulating the plasticity of biological synapses. Due to the internal temporal dynamics of conductance, second-order memristors exhibit the most natural emulation of a biological synapse. Among different types of second-order memristors, ferroelectric memristors show the best cell-to-cell and cycle-to-cycle reproducibility. Here, we demonstrate a flexible ferroelectric second-order memristor on a mica substrate based on the 5-nm-thick polycrystalline Hf0.5Zr0.5O2 film. The conductance (synaptic weight) modulation with ROFF/RON ratio ∼20 is achieved via the gradual switching of the ferroelectric domains affecting the potential barrier in the structure. The devices demonstrate high reproducibility and various synaptic functionalities, including paired-pulse potentiation and paired-pulse depression. Functional properties persist both during static bending and after more than 100 bending cycles with a radius down to 1 cm.
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