钝化
量子点
光电子学
材料科学
发光二极管
光致发光
纳米技术
图层(电子)
作者
Shuaibing Wang,Wanying Yang,Li Yu,Jie Chen,Yangyang Bian,Jilin Deng,Binbin Hu,Fei Chen,Huaibin Shen,Feng Teng,Chunhe Yang,Aiwei Tang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-11-29
卷期号:24 (49): 15781-15787
被引量:31
标识
DOI:10.1021/acs.nanolett.4c04580
摘要
. Additionally, CTA-treated QDs induced the formation of an interface dipole, elevating the energy levels of QDs and reducing the injection barrier for holes. Moreover, the dipole moment at the interface hindered electron injection, achieving a more balanced carrier injection in the device. Consequently, we achieved a peak external quantum efficiency (EQE) of 21.21%.
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