闪光灯(摄影)
与非门
常量(计算机编程)
电荷(物理)
时间常数
材料科学
计算机科学
光电子学
物理
电气工程
逻辑门
光学
工程类
量子力学
算法
程序设计语言
作者
Jinil Yoo,Hyungjun Jo,Hyungcheol Shin
标识
DOI:10.1109/ted.2024.3400757
摘要
In this article, a time constant of lateral charge loss (LCL) mechanism inside 3-D NAND flash memories during their data retention process is comprehensively investigated. 1-D multiscale simulation is conducted to investigate the lateral migration of charges, and Poole–Frenkel emission of charges has turned out to be the most significant factor that determines the time constant of long-term retention. Time constant is modeled as a function of threshold voltage change and trap energy level, and the suggested model makes a good quality fit with the technology computer-aided design (TCAD) simulation results. The results will be a great help to reduce computational and experimental costs that originate from TCAD simulations and needless experiments.
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