High-mobility transparent conductive thin films of cerium-doped hydrogenated indium oxide

We have developed 100-nm-thick cerium-doped hydrogenated indium oxide (ICO:H) films with a superior Hall mobility of 130–145 cm 2 V −1 s −1 . The ICO:H films deposited at 150 °C by dc arc-discharge ion plating were post-annealed at 200 °C. The relationship between the Hall mobility and carrier density of the polycrystalline ICO:H films shows that the carrier transport is limited by an ionized impurity scattering mechanism inside the grains. The surfaces of the ICO:H films were found to be very smooth and clear grain-boundary areas were not observed.