Energy Flux Method for Die-to-Database Inspection of Critical Layer Reticles

With growing implementation of low k1 lithography on DUV scanners for wafer production, detecting and analyzing photomask critical dimension (CD) errors and semitransparent defects is vital for qualifying photomasks to enable high IC wafer yields for 130nm and 100nm nodes. Using the TeraStar pattern inspection system's image computer platform, a new die-to-database algorithm, TeraFlux, has been implemented and tested for the inspection of small "closed" features. The algorithm is run in die-to-database mode comparing the energy flux difference between reticle and the database reference for small closed features, such as, contacts, trenches, and cells on chrome and half-tone reticles. The algorithm is applicable to both clear and dark field reticles. Tests show the new algorithm provides CD error detection to 6% energy flux variation with low false defect counts. We have characterized the sensitivity and false defect performance of the die-to-database energy flux algorithm with production masks and programmed defect test masks. A sampling of inspection results will be presented. Wafer printability results using the programmed defects on a programmed defect test reticle will be presented and compared to the inspection defect sensitivity results.