异质结
单层
半导体
材料科学
光电子学
吸收(声学)
范德瓦尔斯力
吸收边
光催化
带隙
载流子
可见光谱
纳米技术
化学
分子
生物化学
复合材料
催化作用
有机化学
作者
Dingbo Zhang,Zhongpo Zhou,Yue Hu,Zongxian Yang
标识
DOI:10.1088/2053-1591/aaf7c3
摘要
The structure, electronic properties, charge transfer, band edge alignments and optical properties of WS2/BSe heterostructures are investigated by using first-principle calculations. Results imply that WS2/BSe heterostructures are semiconductor with an indirect energy gap (Egap) of 1.73 eV. Additionally, it has a feature of type-II band alignment, which contributes to spatial separation of photo-generated electron-hole pairs in WS2/BSe heterostructures. Charge transfer takes place from BSe to WS2 monolayers, which extends lifetime of the separated photo-induced charge carriers. Most importantly, band edges of the heterostructure are found to meet hydrogen evolution reaction (HER) in acid solutions (0 < pH < 7). Moreover, compared with only one for WS2 and BSe monolayers, the optical-absorption strength of the heterostructure is significantly enhanced and WS2/BSe heterostructures larges the range of absorption to 717 nm in the visible light region, improving the potential photocatalytic efficiency. These results explain the underlying mechanism of the enhanced photocatalytic activity of WS2/BSe heterostructures. Thus WS2/BSe heterostructures can be applied to 2D heterostructured photocatalysts.
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