Photoacoustic cell on silicon for mid-infrared QCL-based spectroscopic analysis

Photoacoustic (PA) spectroscopy is among the most sensitive techniques used to monitor chemical emission or detect gas traces. In the mid-infrared, where most of gases of interest have their strongest absorption lines, this technique takes advantage of the high optical power and room temperature operation of quantum cascade lasers (QCL). We have recently demonstrated that centimeter-size PA cells can compete, with bulky commercial systems for gas sensing without any compromises on performances. We demonstrate a new step towards cost reduction, extreme integration, and mass deployment of such PA sensors with a miniaturized silicon PA-cell fabricated on standard CMOS tools. The design, fabrication and characterizations of this new sub-centimeter PA cell built on a silicon platform are presented. First, the component has been designed using a detailed physical model, accounting for viscous and thermal losses, and metamodel-based optimization techniques. Second, it has been fabricated on our 200 mm CMOS pilot line. Several wafers have been released and diced. Single chips have then been assembled with commercial capacitive microphones and finally characterized on our reference gas bench. The photoacoustic simulations and the acoustics experiments are in a good agreement. The tiny PA cell exhibits a sensitivity down to the ppm level for CO₂ at 2300 cm^-1, as well as for CH₄ at 3057 cm^-1 even in a gas flow. Taking advantage of the integration of QCLs on Si and photonic circuitry, the silicon PA cell concept is currently being extended towards a fully integrated multigas detector.