成核
图层(电子)
材料科学
缓冲器(光纤)
质量(理念)
光电子学
纳米技术
化学
计算机科学
电信
物理
量子力学
有机化学
作者
Wen Li,Shengrui Xu,Yachao Zhang,Ruoshi Peng,Jinjuan Du,Ying Zhao,Xiaomeng Fan,Jincheng Zhang,Hongchang Tao,Xuewei Wang,Yue Hao
摘要
The effect of the carrier gas type on the crystal quality of GaN is investigated in detail. Compared with a single carrier gas (H2 or N2), the employment of N2 during the nucleation layer and H2 in the high temperature buffer layer growth process will lead to smoother surface, stronger photoluminescence spectral strength, and lower threading dislocation density. Furthermore, it is found that conical and snowflake-like protrusions appear on the surface for the sample under pure N2 atmosphere.
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