Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Abstract Silicon carbide nanowire (SiC NW), as a typical wide band gap semiconductor was used as light‐emitting materials and devices in high‐temperature and harsh environments due to its excellent properties. In this paper, flexible ultra‐long SiC NWs membrane was successfully synthesized by electrospinning and subsequently high‐temperature sintering using phenolic resin and silica sol as precursors. Results of system characterization reveal that SiC NWs possess a smooth and uniform surface with diameter distribution mainly between 50‐300 nm and a length of more than tens of micrometers, forming a network structure. The growth mechanism of synthesized nanowires was mainly carbothermal reduction in situ and was accompanied by vapor‐solid (V‐S) reaction. The present work provides a simple and cost‐effective way for controllable fabrication of SiC NWs membrane. The photoluminescence spectrum of SiC NWs membrane emerged a clear blue shift, indicating a potential application in optoelectronic devices and discussed the potential applications of SiC NWs membrane in other fields.