Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)

Extreme ultraviolet (EUV) lithography has been begun high volume manufacturing (HVM). To allow for robust processing, both CAR and novel metal oxide resist (MOR) materials are needed, but they each come with unique challenges specific to the layer being printed. CAR resist shows good capability for CH printing and pattern transfer. However, specific processing techniques for the pattern transfer is required to mitigate LCDU issues. Additionally CAR L/S printing shows robust capability at 18nm HP, but when approaching 16nm HP, the defect process window is impacted by collapse and bridging. For ultimate resolution, novel materials such as MOR have been demonstrated but sensitivities of the materials for CD stability and defectivity need to be mitigated. TOKYO ELECTRON investigates ways to reduce these risks with a novel approach for coating process, post exposure bake, and developing sequence. This paper reports technologies to improve CDU, PW, and defectivity. In addition, we report solutions of solving metal contamination risk for MOR while maintaining productivity.