Homojunction GaAs diode with periodically-inverted structure for nonlinear optical devices

GaAs/AlGaAs waveguides with periodical spatial-inversion structures are expected to function as efficient quasi-phase-matching wavelength conversion devices. To further increase conversion efficiencies, introduction of current injection is promising because optical gain due to spontaneous interband emission can compensate propagation losses and thus leads to higher efficiencies. We have successfully fabricated a GaAs homojunction p-n diode with a periodically-inverted structure for the first time and characterized its electrical and optical properties. We have succeeded in observing interband electroluminescence in the periodically-inverted GaAs homojunction light emitting diode. This will open up novel wavelength conversion devices utilizing current-injection induced optical gain.