Silicon carbide surface micromachining using plasma ion etching of sacrificial layer

The perfectly-defined micrometric shapes patterned by optical lithography and selective etching seems to be a crucial step in fabrication of high voltage and MEMS devices. Wet chemical etching, reactive ion etching and chemical-mechanical processing are widely used in the semiconductor industry to achieve the required shape of the surface. The processes are well understood and successfully applied for resists or silicon oxide layer patterning [1].