超晶格
材料科学
退火(玻璃)
光电子学
结晶度
砷化镓
基质(水族馆)
冶金
复合材料
海洋学
地质学
作者
Xiaoyi Li,Qi Wang,Yifan Wang,Zhigang Jia,Xiaomin Ren,Jun Wang,Shiwei Cai,Xiaoguang Zhang,Yongqing Huang,Xiaofeng Duan
标识
DOI:10.1364/acpc.2013.af2b.17
摘要
High-quality GaAs epilayers on Si substrates have been obtained by insertion of InGaAs/GaAs superlattices combined with thermal cycle annealing. The crystallinity of GaAs epilayer has been investigated by DCXRD, AFM and TEM.
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