材料科学
辐照
中子
电离辐射
伽马射线
电阻率和电导率
辐射
放射化学
中子辐射
碳化硅
放射分析
辐射损伤
中子通量
电导率
分析化学(期刊)
硅
光电子学
化学
光学
核物理学
复合材料
物理
物理化学
量子力学
色谱法
作者
B. Tsuchiya,Tatsuo Shikama,Shinji Nagata,K. Saito,S. Yamamoto,Seiki Ohnishi,Takashi Nozawa
标识
DOI:10.1016/j.fusengdes.2011.03.065
摘要
The radiation-induced changes in the volume electrical conductivities of chemical vapor deposited silicon carbides (CVD-SiCs) were in-site investigated by performing irradiation using 1.17 and 1.33-MeV gamma-ray and 14-MeV fast neutron beams in air and vacuum. Under gamma-ray irradiation at ionization dose rates of 3.6 and 5.9 Gy/s and irradiation temperature of approximately 300 K, the initial rapid increase in electrical conductivity; this is indicative of radiation-induced conductivity (RIC), occurred due to electronic excitation, and a more gradual increase followed up to a dose of approximately 10–50 kGy corresponding to the results in base conductivity without radiation; this is indicative of radiation-induced electrical degradation (RIED). However, the radiation-induced phenomena were not observed at irradiation temperatures above 373 K. Under neutron irradiation at a further low dose rate below approximately 2.1 Gy/s, a fast neutron flux of 9.2 × 1014 n/m2 s, and 300 K, the RIED-like behavior according to radiation-induced modification of the electrical property occurred with essentially no displacement damage, but ionizing effects (radiolysis).
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