石墨烯
扩散阻挡层
氧化物
材料科学
化学气相沉积
成核
纳米技术
铜
氧化石墨烯纸
阻挡层
图层(电子)
化学工程
冶金
化学
有机化学
工程类
作者
Jae Hoon Bong,Seong Jun Yoon,Alexander Yoon,Wan Sik Hwang,Byung Jin Cho
摘要
We report on the diffusion barrier properties of chemical-vapor-deposition grown graphene, graphene oxide, and reduced graphene oxide (rGO) for copper metallization in integrated circuits. Single-layer graphene shows the best diffusion barrier performance among the three but it has poor integration compatibility, displaying weak adhesion and poor nucleation for Cu deposition on top of it. Within the allowable thermal budget in the back-end-of-line process, rGO in a range of 1 nm thickness shows excellent thermal stability with suitable integration compatibility at 400 °C for 30 min. The diffusion barrier property was verified through optical, physical, and chemical analyses. The use of an extremely thin rGO layer as a Cu barrier material is expected to provide an alternative route for further scaling of copper interconnect technology.
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