硅
热力学
分子动力学
体积热力学
表面能
各向异性
熔点下降
熔化温度
材料科学
直线(几何图形)
化学
物理
计算化学
光学
几何学
复合材料
冶金
数学
作者
Soohaeng Yoo,Xiao Cheng Zeng,James R. Morris
摘要
The molecular-dynamics simulation approach [Morris and Song, J. Chem. Phys. 116, 9352 (2002)] is employed to calculate the melting lines for two model systems of silicon: the Stillinger–Weber (SW) model and the Tersoff-89 model. To address the anisotropic stress problem indicated in the previous paper, a slightly improved simulation procedure is used to prepare the coexisting solid and liquid phases at the thermodynamic equilibrium. For the SW silicon, the calculated melting temperature Tm at zero pressure agrees with that based on the free-energy calculation [Broughton and Li, Phys. Rev. B 35, 9120 (1987)]. The dependence of Tm at zero pressure on the selected solid surface orientation is also examined. The relative difference between Tm calculated based on the sharp Si (111)/liquid interface and the faceted Si (100)/liquid interface is less than 1%. Both models predict that the melting line exhibits a negative slope, which is consistent with the fact that the molar volume of the solid is larger than that of liquid upon melting.
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