H.D. Wu,Kevin F. Harsh,R.S. Irwin,Wenge Zhang,Alan Rolf Mickelson,Y.C. Lee,J.B. Dobsa
出处
期刊:IEEE MTT-S International Microwave Symposium digest [Institute of Electrical and Electronics Engineers] 日期:2002-11-27卷期号:1: 127-129被引量:34
标识
DOI:10.1109/mwsym.1998.689339
摘要
A new tunable capacitor based on a standard microelectromechanical systems (MEMS) technology has been demonstrated. Its unique feature was the use of thermal actuators as indirect drives to change air gap from 2 to 0.2 /spl mu/m for high-Q MM-wave capacitors. Such a drive scheme achieved a sub-/spl mu/m controllability. The insertion loss of a polysilicon MEMS capacitor was measured to be -4dB at 40 GHz. Such a loss would have been better than -1 dB if the polysilicon were coated with metal.