Combined resistance and temperature change measurement for the study of electromigration

A resistometric method has been developed to measure electromigration kinetic parameters under high current stress conditions in a short time. In this technique, the resistance R and the temperature increase ΔT of thin film stripes are measured simultaneously. A thin film thermocouple, which is formed adjacent to the thin film stripe, is used for temperature measurement. The resistance change due to electromigration, REM, is calculated by using the following equation REW = R − R0 (1 + αΔT). (R0: initial resistance, α: temperature coefficient). In this manner one distinguishes between electromigration and the effect of joule heating. The activation energies derived from dREM/dt vs T plots are 0.55 eV for pure Al and 0.82 eV for Al-2 wt% Cu. This. experiment can be done in a short period of time with no external heater needed, and thus allows for an easy evaluation of electromigration kinetic parameters.