Epitaxy of Dissimilar Materials

Differences in crystal structure, bonding, and materials properties play important roles in dissimilar materials epitaxy. Emphasis is placed on how these differences affect the growth of dissimilar materials heterostructures. Examples of the growth of elemental metals and semi-metals (AI, Ag, Sb, Bi); metallic and semi-metal compounds (transition-metal group III compounds with CsCI crystal structure, rare-earth group V compounds with NaCl crystal structure, orthorhombic YbSb2, Fe3AI'_xSix with BiF3 crystal structure); magnetic compounds (tetragonal ,-MnAI, hexagonal �­ MnAs); and insulators (rare-earth trifluorides with tysonite crystal struc­ ture, metal fluorides with the CaF2 crystal structure) on compound semi­ conductors are used to demonstrate the issues involved. The use of tem­ plate layers is crucial in controlling the orientation and crystal quality of the epitaxial layers.