A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics

Metal-insulator-metal (MIM) capacitors with different HfO ₂ thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO ₂ thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO ₂ shows a record high capacitance density of 13 fF/μm ² and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10/sup -8/A/cm ² at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications.