Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC

Abstract Hole traps generated in the tail region of Al ion implantation in p-type 4H-SiC were characterized by deep-level transient spectroscopy measurements. Hole traps energetically located at E v + 0.51 eV, E v + 0.72 eV, E v + 0.77 eV, and E v + 1.40 eV ( E v : energy of the valence band top) were detected. The hole trap densities were roughly 7–40 times smaller than the implanted Al atom density in the tail region, and the densities of the observed traps exponentially decreased with the decay lengths of 84–150 nm.