Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor (DMDG‐NC‐TFET) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing

ABSTRACT This paper developed the novel structure of a dual material double gate negative capacitance tunnel field effect transistor (DMDG‐NC‐TFET) using HZO ferroelectric material. This study systematically improved the drain current and subthreshold swing (SS) by inducing a negative capacitance effect in a gate stack. The proposed gate oxide structure is a stack configuration of ferroelectric material, and high‐k dielectric to improve gate control. The Landau–Khalatnikov (LK) equation is used to solve the Poisson equation and get an accurate estimate of the channel potential. Kane's model is used for band‐to‐band generation rate calculation. For modelling the drain current, the band‐to‐band tunnelling (G btbt ) generation rate is integrated using the entire device volume. The impact of varying ferroelectric thickness in the proposed structure has been investigated with the simulated results. The outcomes demonstrate that the device can obtain better improvements in ON current and SS, compared to conventional DMDG‐TFET. By contrasting the analytical results with the outcomes of the TCAD simulation, the effectiveness of the proposed methodology has been demonstrated.