Deep insights into energy materials utilizing anomalous X-ray diffraction
作者
Daniel Maria Többens,Y. Tomm,D. G. Porter,Sara Niedenzu,Adair Nicolson,Galina Gurieva,Joachim Breternitz,Susan Schorr
出处
期刊:日期:2024-08-26卷期号:80 (a1): e428-e428
标识
DOI:10.1107/s2053273324095718
摘要
Cation arrangement, disorder and defects substantially impact the optoelectronic properties of multinary semiconductors [1].While often an inconvenience, this also provides opportunities to enhance optical properties such that improved absorption coefficient and photovoltaic device efficiency can be achieved [1].Due to the fundamental relationship between atomic geometry, electronic structure and physical properties such tuning requires a solid knowledge of the atomistic material structure.