材料科学
宽带
噪声系数
光放大器
光电子学
铒
化学气相沉积
带宽(计算)
兴奋剂
光纤
放大器
光学
激光器
电信
计算机科学
物理
CMOS芯片
作者
Yi Hong,Wei Chen,Renli Xiong
标识
DOI:10.1109/ogc59456.2023.10314652
摘要
We fabricated an ultra-broadband Erbium-Doped Fiber (EDF) by the Modified Chemical Vapor Deposition (MCVD) technique. The bandwidth of EDF with gain more than 25 dB is 49.0 nm (1525.0 -1574.0 nm), the Noise Figure (NF) is less than 6.1 dB by 980 nm forward pumping. The saturated output power of EDF is 17.5 dBm. By bidirectional pumping, the bandwidth of EDF with gain more than 25 dB is 53.4 nm (1523.3-1576.7 nm). This ultra-broadband and low-noise EDF is a promising gain medium for optical amplifiers and lasers.
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