异质结
石墨烯
自旋电子学
铁磁性
凝聚态物理
范德瓦尔斯力
材料科学
光电子学
纳米技术
化学
物理
分子
有机化学
作者
Bing Zhao,Bogdan Karpiak,Md. Anamul Hoque,Pallavi Dhagat,Saroj P. Dash
标识
DOI:10.1088/1361-6463/acb801
摘要
Abstract Two-dimensional magnets offer a new platform for exploring fundamental properties in van der Waals (vdW) heterostructures and their device applications. Here, we investigated heterostructure devices of itinerant metallic vdW ferromagnet Fe 3 GeTe 2 (FGT) with monolayer chemical vapor deposited graphene. The anomalous Hall effect measurements of FGT Hall-bar devices exhibit robust ferromagnetism with strong perpendicular anisotropy at low temperatures. The electrical transport properties measured in FGT/graphene heterostructure devices exhibit a tunneling transport with weak temperature dependence. We assessed the suitability of such FGT/graphene heterostructures for spin injection and detection and investigated the presence of FGT on possible spin absorption and spin relaxation in the graphene channel. These findings will be useful for engineering spintronic devices based on vdW heterostructures.
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