Anisotropic anomalous transport in the kagome-based topological antiferromagnetic Mn3Ga epitaxial thin films

Weyl semimetals based on Mn${}_{3}$X (X=Sn, Ge, Ga) are promising materials for antiferromagnetic (AFM) spintronics. Kagome spin structure formed by the Mn moments coupled to nontrivial band topology produces giant topological effects in these materials. Mn${}_{3}$Ga with the largest N\'eel temperature among this class of materials, is potentially useful for high-speed device applications. In this work, authors develop AFM epitaxial Mn${}_{3}$Ga films with controlled crystal orientation, accessing different orientation of Kagome planes formed by Mn moments. Detailed investigations through structural, magnetization, magnetoresistance, DC and terahertz electrical transport reveal the anisotropic transport signatures emerging from the nontrivial band topology.