Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

The optical and chromatic characteristics of InGaN-based micro-light-emitting diodes (micro-LEDs) grown on silicon substrates with blue, green, and red emissions have been investigated. The red micro-LEDs exhibited a large full-width at half maximum and a strong blueshift upon increasing current density. The 20 μm blue, green, and red micro-LEDs achieve a maximum external quantum efficiency of 8.2% at 2.65 A/cm2, 5.1% at 5 A/cm2, and 0.62% at 0.1 A/cm2, respectively, which is superior to their 8 μm counterparts. The dependences of a color gamut on the temperature and current density of InGaN-based tri-color micro-LEDs can provide guidance for improving the performance of full-color micro-LED displays.