材料科学
异质结
红外线的
外延
光电子学
灵敏度(控制系统)
锗
纳米技术
光学
硅
图层(电子)
电子工程
物理
工程类
作者
Leisheng Su,Yun Liu,Weili Liu,Dong Yang,K. Chen,Yiming Yang,Haofei Shi,Chang Yang,Deping Huang,Jijun Qiu
摘要
A new p + pBn + barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.
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