X射线吸收光谱法
电子结构
X射线光电子能谱
谱线
价(化学)
吸收光谱法
四极分裂
光谱学
电子
化学
各向异性
原子物理学
材料科学
分析化学(期刊)
结晶学
穆斯堡尔谱学
核磁共振
物理
计算化学
光学
色谱法
天文
有机化学
量子力学
作者
Pierre‐Emmanuel Lippens,Mohammed El Khalifi,M. Womes
标识
DOI:10.1002/pssb.201600194
摘要
The electronic structures of SnS and SnS 2 have been investigated from first principles calculations to provide a full analysis of the valence and conduction bands. A good agreement with experimental X‐ray photoelectron spectroscopy (XPS), S Kβ X‐ray emission spectroscopy (XES) and X‐ray absorption spectroscopy (XAS) at S K, Sn L 1 and Sn L 3 edges is found and the main features of the spectra are analysed in terms of chemical bonding. In the case of XAS, we show that core‐hole effect is significant at the S K edge. The origin of the 119 Sn Mössbauer parameters has been also investigated. The increase of the isomer shift from SnS 2 to SnS is related to the increase of Sn 5s electron population and correlated to the decreasing intensity of the lowest energy peak of the XAS spectra at the Sn L 3 edge. The values of the quadrupole splitting evaluated from the electric field gradients at the nucleus are explained from the Sn 5p electron anisotropy. Finally, the effects of interlayer interactions and intralayer local distortion are examined by considering different structural models.
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