光电探测器
材料科学
光电子学
电极
硅
电容
砷化镓
光学
探测器
集成光学
光电导性
带宽(计算)
电气工程
逻辑门
作者
Yuanyang Gao,Zhengjie Tang,Dan Zhao,Feng Jiang,Zhangcheng Liu,Yang Li,Zhiwei Chen,Tao Liu,Xiao Wang,Jinping Ao
标识
DOI:10.1109/led.2026.3681483
摘要
This work systematically investigated the high-temperature performance of an all-diamond UV detector utilizing heavily boron-doped diamond (BDD) as transparent electrodes. The dark current increases moderately from 5.65×10-11 A at RT to 2.26×10-10 A at 450 °C, while the photocurrent under 222 nm increases obviously, leading to the responsivity increasing from 0.07 A/W to 0.37 A/W. The UV-to-visible rejection ratio rises from 2.86×104 to 1.16×106. Dynamic response measurements reveals that the rise time increases slightly from 0.02 s to 0.1 s, while the decay time remains stable at 0.03 s, suggesting that the response speed is virtually unaffected by high temperatures. Furthermore, the optoelectronic properties of the detector remain consistent during continuous high-temperature operation and long-term tracking test, demonstrating excellent thermal stability. This study proves that the all-diamond detector with BDD transparent electrodes exhibits outstanding advantages in high-temperature stability and response performance, providing a promising pathway for the development of high-performance UV detection technology in harsh environments.
科研通智能强力驱动
Strongly Powered by AbleSci AI