Two‐terminal Perovskite silicon tandem solar cells with a high‐Bandgap Perovskite absorber enabling voltages over 1.8 V

Abstract Perovskite silicon tandem solar cells are a promising technology to overcome the efficiency limit of silicon solar cells. Although highest tandem efficiencies have been reported for the inverted p‐i‐n structure, high‐efficiency single junction perovskite solar cells are mostly fabricated in the regular n‐i‐p architecture. In this work, regular n‐i‐p perovskite solar cells with a high‐bandgap mixed cation mixed halide absorber suitable for tandem solar cells are investigated by compositional engineering and the open‐circuit voltage is improved to over 1.12 V using a passivating electron contact. The optimized perovskite solar cell is used as a top cell in a monolithic perovskite silicon tandem device with a silicon heterojunction bottom cell allowing for voltages up to 0.725 V. The tandem solar cells with an active area of 0.25 cm2 achieve record open‐circuit voltages of up to 1.85 V and have efficiencies over 20%. Analyzing the perovskite absorber by spatially resolved photoluminescence measurements shows a homogenous and stable emission at ~ 1.7 eV which is an optimal value for tandem applications with silicon. The tandem solar cells are mainly limited due to a low current. A spectrometric characterization reveals that the perovskite solar cell is current limiting which could be improved by a thicker perovskite absorber.