光电二极管
铌酸锂
光电子学
响应度
材料科学
光子学
光电探测器
光子集成电路
光学
物理
作者
Xiangwen Guo,Linbo Shao,Lingyan He,Kevin Luke,John D. Morgan,Keye Sun,Jinliang Gao,Ta-Ching Tzu,Yang Shen,Dekang Chen,Bingtian Guo,Fengxin Yu,Qianhuan Yu,MASOUD JAFARI,Marko Lončar,Mian Zhang,Andreas Beling
出处
期刊:Photonics Research
[The Optical Society]
日期:2022-05-12
卷期号:10 (6): 1338-1338
被引量:21
摘要
Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.
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