0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance

Srx(Na0.5Bi0.5)1−xTi0.99Mn0.01O3 (x = 0.2, 0.4, 0.6, and 0.8) relaxor ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates by the Sol-Gel method. The influence of the Sr content on the microstructures, ferroelectric properties, and energy-storage performances of the thin films were investigated in detail. The Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film exhibits very slim hysteresis loops with the highest electric breakdown field strength due to reduced oxygen vacancies. Owing to the high breakdown field strength of 3134.3 kV/cm, the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film shows a giant recoverable energy-storage density of 33.58 J/cm3. These results indicate that the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film is promising for applications of advanced capacitors with high energy-storage density.