材料科学
钝化
退火(玻璃)
薄板电阻
溅射沉积
硅
光电子学
电导率
分析化学(期刊)
溅射
微晶
兴奋剂
化学工程
纳米技术
薄膜
图层(电子)
复合材料
冶金
化学
工程类
物理化学
色谱法
作者
Tobias Wietler,Byungsul Min,Sina Reiter,Yevgeniya Larionova,Rolf Reineke‐Koch,Frank Heinemeyer,Rolf Brendel,Armin Feldhoff,Jan Krügener,D. Tetzlaff,Robby Peibst
出处
期刊:IEEE Journal of Photovoltaics
日期:2019-01-01
卷期号:9 (1): 89-96
被引量:18
标识
DOI:10.1109/jphotov.2018.2878337
摘要
We investigate the enhancement in transparency and conductivity of aluminum doped zinc oxide (ZnO:Al) layers upon high-temperature annealing and its impact on contact resistance, as well as, on passivation properties of carrier selective junctions based on doped polycrystalline Si on a passivating silicon oxide (POLO). The temperature stability of these junctions allows annealing of the ZnO:Al/POLO combination up to 600 °C. We prepare ZnO:Al films by dc magnetron sputtering at room temperature. We determine the complex refractive index of ZnO:Al in dependence of post-deposition annealing (PDA) temperature by spectroscopic ellipsometry. High-temperature annealing improves the conductivity and reduces the absorption within ZnO:Al. The optical losses in a ZnO:Al/POLO stack are rather limited by the poly-Si layer than by the ZnO:Al. The sheet resistance improves from roughly 20 000 Ω/sq for 80 nm thick as-deposited ZnO:Al films to 72 Ω/sq after fast firing at 600 °C. At the same time, PDA cures the damage induced in the POLO junctions during ZnO:Al deposition. After PDA with Al x O y capping layers, the passivation quality even surpasses the initial level. A transmission electron microscopy analysis of the interface between the ZnO:Al and the underlying poly-Si reveals the formation of a silicon oxide like interfacial layer after PDA at 400 °C. This interfacial layer causes a high contact resistivity of the metal/ZnO:Al/POLO-junction and could limit the thermal budget for cell processing. Our results indicate that after successful process adjustment, ZnO:Al could substitute In-based transparent conductive oxides on POLO cells for cost reasons, as well as, enable a high efficiency potential.
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