Research on CuInS_2 Thin Films Prepared by One-step Electrodeposition

CIS thin films with different Cu/In ratio were prepared intentionally by one-step electrodeposition technique on ITO glass substrates,respectively.The thin films were characterized by scanning electron microscope (SEM),energy-dispersive spectrometry (EDS),X-ray diffraction (XRD) and ultraviolet-visible spectrophotometer.The influence of Cu/In ratio in precursors on crystalline and optical property of the films was discussed.The results reveal that as-deposited Cu-In-S films with different Cu/In ratio obtained by the optimized parameter of the solution composition pH and the deposition conditions,have smooth,compact,crack-free surface and adhere to substrates.Annealing treatment can improve crystalline of the CIS thin films.The size of average grains increases with the Cu/In ratio of the as-deposited films.Annealed films with a band gap of about 1.47 eV are chalcopyrite phase and have preferably optical property.