Optical Gating of Graphene on Photoconductive Fe:LiNbO3

We demonstrate experimentally nonvolatile, all-optical control of graphene's charge transport properties by virtue of an Fe:LiNbO₃ photoconductive substrate. The substrate can register and sustain photoinduced charge distributions which modify locally the electrostatic environment of the graphene monolayer and allow spatial control of graphene resistivity. We present light-induced changes of graphene sheet resistivity as high as ∼370 Ω/sq (∼2.6-fold increase) under spatially nonuniform light illumination. The light-induced modifications in the sheet resistivity are stable at room temperature but can be reversed by uniform illumination or thermal annealing (100 °C for 4 h), thus restoring graphene's electrical properties to their initial, preillumination values. The process can be subsequently repeated by further spatially nonuniform illumination.