Temperature Dependent Enlargement of Photonic Bandgaps in a Superconductor Photonic Crystal

Abstract In the present simulation, the study theoretically investigates the effect of temperature on the bandgaps of a 1D superconductor‐dielectric photonic crystal with different thicknesses of the semiconducting layer, for a fixed lattice parameter d . For this study, the alternate layers of superconductor and dielectric materials are taken as the SPC. In this work, 3D transmission spectra of the SPC against wavelength and temperature is plotted, for three chosen values of the thickness of the semiconducting layer. The study finds that, an increase in temperature causes enlargement in the two bandgaps obtained for a fixed thickness of the semiconducting layer, while there is less impact of temperature on the first bandgap. On the other hand, the study notices that a decrease in the thickness of the semiconducting layer decreases these two obtained enlarged bangaps. Hence, it is demonstrated that temperature and semiconducting layer thickness are the controlling factors for the bandgap widths, and these two parameters also tune the band locations, particularly of the second band obtained in higher wavelength range. This analysis can be employed in designing bandgap based temperature sensors and in switching devices.