Effect of tin source temperature on the β-Ga2O3 film deposited by MOCVD

The article aims to investigate the effect of doping source temperature on the crystal quality of thin films. By changing the temperature of the tin source, a single crystal gallium oxide film was deposited on C-plane sapphire using the MOCVD. The results indicate that the decrease in tin source temperature makes it easier for tin atoms to replace Ga atoms at lattice sites and reduces damage to the lattice. At −20 ℃ tin source, the doped thin film not only had minimum full width at half maxima of 2.04° and a roughness of 4.45 nm, but also the ratio of photocurrent to dark current of the photodetector reached the highest of 526, and the rise and fall time responses achieved the lowest of 4.81 s and 5.24 s, respectively. Our work can optimize the crystal quality of doped thin films and the photodetectors performance by controlling the tin source temperature.