材料科学
聚酰亚胺
复合数
电介质
复合材料
高-κ电介质
化学工程
图层(电子)
光电子学
工程类
作者
Yu Long,Chunhui Qu,Yuting Kang,Xu Huang,Peng Zan,Junshu Chen,Xin Sun,Qinlin Yu,Yatang Dai,Wei Wang,Linyu Pu,Huan Zhang
摘要
Abstract In order to prepare polymer dielectric materials with high energy storage density, a series of polyimide (PI) based Janus composite films were prepared by metal–organic frameworks (MOFs) material (UiO‐66) with high dielectric constant ( ɛ r ) and boron nitride nanosheets (BNNSs) with high breakdown strength ( E b ). As reported, the UiO‐66 can significantly improve the ɛ r of the composites. The ɛ r of 20 wt% UiO‐66/PI film is 10.51 at 10 3 Hz, which is 3.1 times that of pure PI film (3.39 at 10 3 Hz). However, the E b of 20 wt% UiO‐66/PI is only 58 MV m −1 , which is only 16.51% of pure PI (352 MV m −1 ). The sharp decline in E b reduces the energy storage capacity of the composites. To solve this problem, first, BNNSs with an average diameter of 2 μm and a thickness of 1.36 nm (about 4–5 layer) were obtained by hydrothermal reflux stripping. BNNSs/PI//UiO‐66/PI Janus composite films with double‐layer structure were prepared by directly casting BNNSs/PI on the surface of UiO‐66/PI. For 0.3 wt% BNNSs/PI//10 wt% UiO‐66/PI, the calculated energy storage density ( U e ) is 5.75 J cm −3 at 140 MV m −1 , which is 3.57 times that of pure PI film (1.61 J cm −3 at 140 MV m −1 ). Meanwhile, the charge discharge efficiency is 82.55% (at 140 MV m −1 ). Highlights BNNSs prepared by hydrothermal reflux stripping have fewer layers. BNNSs/PI composites improve the E b of UiO‐66/PI composites by Janus structure. The U e of BP‐0.3//UP‐10 composites with Janus structure was 5.75 J cm −3 .
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