Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Abstract In this review, we briefly summarize the major challenges and our recent progress in the development of GaN Junction Barrier Schottky (JBS) diodes using selective-area p-type doping with ion implantation and ultra high-pressure annealing (UHPA) process. As a starting point, we discuss the properties of Schottky contacts in the context of UHPA and provide design principle for a high performance JBS diode. Next, we propose a JBS diode having p-type regions formed by channeled ion implantation. This kind of device can provide ultra-low leakage currents and a much better trade-off between on-resistance ( R ON ) and breakdown voltage (BV). Finally, we demonstrate our high-performance JBS diodes which exhibited the superior electrical characteristics (record low R ON from 0.57 to 0.67 mΩ cm 2 and high BV from 660 to 675 V) and nondestructive breakdown.