放大器
可靠性(半导体)
材料科学
电气工程
功率(物理)
电子工程
工程类
光电子学
CMOS芯片
物理
热力学
作者
Qian Lin,Fei You,Jihua Wu,Yingchun Lv
出处
期刊:Electronics
[MDPI AG]
日期:2023-10-18
卷期号:12 (20): 4307-4307
被引量:3
标识
DOI:10.3390/electronics12204307
摘要
In order to study the temperature reliability of high-power amplifiers under high cand cold conditions, a 400 W solid-state power amplifier was taken as an example to explore the variation in its performance. The test results showed that its output power, gain, and power-added efficiency increased with the increase in temperature at a fixed frequency. Under a fixed input power, Pout and gain both showed different trends with the rising temperature. Within the frequency band of 2–10 MHz, the higher the temperature, the better the output power and gain. However, within the frequency range of 10–30 MHz, the higher the temperature, the worse the performance. Moreover, with the increasing temperature, its power-added efficiency, the second harmonic and the third harmonic also showed a decreasing trend. Detailed analysis showed that the degradation and inversion of performance parameters are closely related to the zero temperature coefficient and self-heating effect of the lateral double-diffused metal–oxide–semiconductor field-effect transistor. Meanwhile, it is also affected by the circuit structure and thermal design of the PA. In order to ensure stable performance in different environments, performance degradation can be improved by hardware compensation. Therefore, analyzing the working parameters at different temperatures for high-power PAs is the key to achieving temperature control and ensuring their long-term stability and reliability. This can provide relatively accurate reference data for subsequent heat dissipation optimization, greatly improve design efficiency, and even shorten the development cycle and reduce costs.
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