Self-Induced Valley Bosonic Stimulation of Exciton Polaritons in a Monolayer Semiconductor

The newly discovered valley degree of freedom in atomically thin two-dimensional transition metal dichalcogenides offers a promising platform to explore rich nonlinear physics, such as spinor Bose-Einstein condensate and novel valleytronics applications. However, the critical nonlinear effect, such as valley polariton bosonic stimulation, has long remained an unresolved challenge due to the generation of limited polariton ground state densities necessary to induce the stimulated scattering of polaritons in specific valleys. Here, we report the self-induced valley bosonic stimulation of exciton polaritons via spin-valley locking in a WS_{2} monolayer microcavity. This is achieved by the resonant injection of valley polaritons at specific energy and wave vector, which allows spin-polarized polaritons to efficiently populate their ground state and induce a valley-dependent bosonic stimulation. As a result, we observe the nonlinear self-amplification of polariton emission from the valley-dependent ground state. Our finding paves the way for the investigation of spin ordering and phase transitions in transition metal dichalcogenides polariton Bose-Einstein condensate, offering a promising route for the realization of polariton spin lattices in moiré polariton systems and spin lasers.