材料科学
石墨烯
化学气相沉积
二硫化钼
纳米技术
聚合物
铁电性
退火(玻璃)
极化
粘附
氮化硼
化学工程
铁电聚合物
薄膜
二硫化钨
居里温度
六方氮化硼
复合材料
分层(地质)
铜
掺杂剂
兴奋剂
光电子学
磁滞
传热
钼
作者
Deqiang ZHANG,Jing Ying Yeo,Hanning Zhang,Ruslan Yamaletdinov,Qian Yang,Yufeng Zhan,Inigo Martin-Fernandez,Oleg V. Yazyev,Chee‐Tat Toh,Barbaros Özyilmaz
标识
DOI:10.1002/adma.202510545
摘要
Abstract Although chemical vapor deposition (CVD) produces meter‐scale, high‐quality graphene (Gr) on copper (Cu) foils, its practical integration is hampered by challenges in the transfer process. Conventional wet transfers are slow, produce chemical waste, and lack scalability, whereas existing dry transfer methods struggle with mechanical damage and residues due to strong Gr‐Cu adhesion and the difficulty in precisely tuning interfacial forces. Here, a fully dry, industrially compatible transfer platform utilizing a ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) film with electrostatically switchable adhesion, serving as both a mechanical support and a transfer layer, is demonstrated. Negative Corona poling of P(VDF‐TrFE) induces p‐type doping in graphene. Density Functional Theory calculations confirm that this simultaneously reduces Gr‐Cu adhesion while increasing P(VDF‐TrFE)‐Gr adhesion, enabling clean, large‐scale graphene delamination from Cu foils with >99% coverage. Subsequent thermal annealing above P(VDF‐TrFE)’s Curie temperature (≈135 °C) depolarizes the film, neutralizing the interfacial charge for a clean release. The versatility of this method is shown for other two‐dimensional (2D) materials, including molybdenum disulfide and hexagonal boron nitride. Crucially, the process has been validated on cm‐scale samples using a fully automated system with a transfer time of <5 min, highlighting a viable path toward industrial‐scale production of high‐quality 2D material films.
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