Linking synthesis to properties in two-dimensional transition metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDs), such as MoS 2 , WS 2 , MoSe 2 , and WSe 2 , have captivated the research community due to their unique layer-dependent electronic structures, strong spin-orbit coupling, and remarkable optical and catalytic properties. The realization of their potential in next-generation electronics, optoelectronics, and energy applications, however, is intrinsically linked to the development of controlled and scalable synthesis methods. This review provides a systematic overview of the fundamental properties of TMDs and a comprehensive analysis of the evolving synthesis landscape. We critically evaluate a wide spectrum of preparation techniques, from foundational mechanical exfoliation for fundamental studies to scalable bottom-up approaches like chemical vapor deposition (CVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE). A key focus is placed on discussing the advantages and limitations of each method in controlling critical parameters such as layer uniformity, phase stability, and defect density. By connecting synthesis strategies with the resulting material properties and application performance, this work aims to offer valuable insights and a technical framework for guiding the future development of high-performance TMD-based devices and accelerating their journey from laboratory research toward practical industrialization. • Comprehensive review of TMD structures, properties, and synthesis approaches. • Summarizes top-down and bottom-up methods for scalable TMDs fabrication. • Highlights surface/interface properties crucial for optoelectronics and catalysis. • Emerging Janus and moiré superlattice TMDs are discussed with future perspectives. • Potential applications in optoelectronics, catalysis, and flexible electronics are outlined.