Dynamic R ON performance of ultra-wide bandgap AlGaN-channel HEMTs up to 1 kV off-state blocking voltage

Abstract Ultra-wide bandgap Al-rich AlGaN high electron mobility transistors (HEMTs) are compelling for next-generation power electronics due to their high critical electric fields. However, the performance of nitride HEMTs is limited by RON degradation during switching operation. To date, the switching performance of AlGaN-channel HEMTs has not been evaluated under high voltage (> 600 V) off-state bias. We demonstrate dynamic performance of AlGaN-channel HEMTs under off-state blocking voltages up to 1 kV, showing RON degradation of 1.5x/650 V and 6.5x/1,000V with a single field plate structure. These results highlight initial progress and challenges towards engineering degradation-free AlGaN-channel kV lateral transistors.