Light emitting transistors: A new route for display pixels (Presentation Recording)

Organic light emitting transistors (LEFETs) are an emerging class of light emitting devices that have been successfully demonstrated in single-layer [1] and mutli-layer device structures [2]. LEFETs can simultaneously execute light-emission and standard logic functions (ON/OFF) of a transistor in a single device architecture [1]. This dual functionality of LEFETs has a potential to offer a new route to simplify fabrication of display pixels. However, the key problem of existing LEFETs thus far has been their low external quantum efficiency (EQE) at high brightness, poor ON/OFF ratio, and mobility. More recently, hybrid light emitting transistors [3-4], consisting of solution processed n-type metal oxide (inorganic) as the charge transport layer and light emitting conjugated polymer (organic), have been used to achieve higher mobility, ON/OFF ratio and brightness. In this talk, I will discuss the various factors that currently influence device performance in LEFETs, and will provide insights into our recent progress in developing high-performance hybrid LEFETs. References: (1). E. B. Namdas, J. S. Swensen, P. Ledochowitsch, J. D. Yuen, D. Moses, A. J. Heeger, Adv. Mater.,20, 1321 (2008). (2). M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas. Adv. Mater. 25, 6213–6218 (2013). (3). B. Walker, M. Ullah, G. J. Chae, P. L Burn, S. Cho, J. Y. Kim, E. B. Namdas, J. H. Seo. Appl Phys Lett, 105, 183302 (2014). (4). K. Muhieddine, M. Ullah, B. N. Pal, P. Burn, E. B. Namdas, Adv. Mater. 26, 6410 (2014).